Optical waveguides in InGaAsP and InP

Details Optical waveguides in InGaAsP and InP Optical waveguides in InGaAsP and InP

1982-01-04

1983-03-08

Hoffman, James R.

Coating processes

Coating has x-ray, ultraviolet, or infrared properties

427 85, 427162, 427163, 427164, G02B 5172

Patent

active

043761380

ABSTRACT:
Optical waveguides are formed in semiconductors, for example, InP and InGaAsP, by indiffusion of selected metal atoms.

REFERENCES:
patent: 4093345 (1978-06-01), Logan et al.
patent: 4177298 (1979-12-01), Shigeta et al.
patent: 4284663 (1981-08-01), Carruthers et al.
Reinhart et al., "Transmission Properties of Rib Waveguides Formed by Anodization of Epitaxial GaAs on Al.sub.x Ga.sub.1-x As Layers", Applied Physics Letters, vol. 24, No. 6, Mar. 15, 1974, pp. 270-272.
Campbell et al., "GaAs Electrooptic Directional Coupler Switch", Applied Physics Letters, vol. 27, No. 4, Aug. 15, 1975, pp. 202-205.
Benson et al., "Photoelastic Optical Waveguiding in InP Epitaxial Layers", 7th European Conference on Optical Communication, Sep. 8-11, 1981, pp. 9.4-1 to 9.4-3.

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