Optical waveguide utilizing an antiresonant layered structure

Details Optical waveguide utilizing an antiresonant layered structure Optical waveguide utilizing an antiresonant layered structure

1986-01-06

1987-12-29

Lee, John

350 9634, G02B 610

Patent

active

047156724

ABSTRACT:
A planar silicon dioxide waveguide with low loss for the TE mode has been built on a silicon wafer by separating the waveguide from the substrate with a relatively thin layer of polycrystalline silicon and a layer of silicon dioxide having a combined thickness less than that of the waveguide. The separating layers provide a high antiresonant reflectivity which is operative over a broad range of wavelengths.

REFERENCES:
patent: H000077 (1986-07-01), Yao et al.
patent: 4006964 (1977-02-01), Mahlein et al.
patent: 4466694 (1984-08-01), MacDonald
Proc. of IEEE, May 1974, "The Grating Guide-A Component for Integrated Optics", A. J. Fox, pp. 644-645.
Optics Comm., vol. 19, No. 3, Dec. 1976, "Bragg Reflection Waveguides", P. Yeh et al, pp. 427-430.
App. Phys. Lett., vol. 30, No. 9, May 1, 1977, "Observation of Confined Propagation in Bragg Waveguides", A. Y. Cho et al, pp. 471-472.
App. Phys. Lett., 42(7), Apr. 1, 1983, "A Low-Scattering Graded-Index SiO.sub.2 Planar Optical Waveguide Thermally Grown on Silicon", D. E. Zelmon, pp. 565-566.
App. Phys. Lett., 43(6), Sep. 15, 1983, "Low-Loss Integrated Optical Waveguides Fabricated by Nitrogen Ion Implantation", I. K. Naik, pp. 519-520.
SPIE, vol. 578, 1985, "Use of Thermal Nitridation to Fabricate Low Loss Planar Optical Waveguides in SiO.sub.2 ", D. E. Zelmon et al, pp. 100-101.

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