Optical waveguide epitaxially grown on semiconductors for upconv

Details Optical waveguide epitaxially grown on semiconductors for upconv Optical waveguide epitaxially grown on semiconductors for upconv

1994-02-14

1995-05-02

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054126797

ABSTRACT:
A multilayer structure is disclosed which includes a single crystal semiconductor substrate. On the substrate is an epitaxial buffer layer, and on the buffer is an epitaxial fluoride outer layer exhibiting upconversion excitation upon red or infrared irradiation.

REFERENCES:
patent: 4637029 (1987-01-01), Hayakawa et al.
patent: 5181218 (1993-01-01), Ishikawa et al.
patent: 5251225 (1993-10-01), Eglash et al.
patent: 5290730 (1994-03-01), McFarlane et al.

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