Optical waveguides – Planar optical waveguide – Thin film optical waveguide
Patent
1994-07-27
1996-02-13
Lee, John D.
Optical waveguides
Planar optical waveguide
Thin film optical waveguide
385 9, 385 39, 385141, 437 25, 437 27, 437247, G02B 6134
Patent
active
054917689
ABSTRACT:
In an optical waveguide fabrication process, medium weight, relatively stable ions, such as oxygen ions, are implanted, preferably in a multiple-step, multiple-energy level process, into GaAs, InP or other like III-V materials and heterostructures and then annealed by radiant heat, in order to produce a structure with an elevated index of refraction without restriction on the carrier concentration or resistivity of the stock wafer by the presumed generation of stable crystalline defects in the implanted region. The ions used for implantation should not generate free carriers once implanted.
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Chan et al. "Modification of Refractive Index of GaAs by Ion Implantation of Oxygen," Nuclear Instruments and Methods in Physics Research, Sect. B, (NIM B), vol. 83, No. 1 pp. 177-180 (2 Oct. 1993), North-Holland (Elesvier Science Publishers, B.V., Amsterdam).
Allen Kenneth R.
Lee John D.
The Chinese University of Hong Kong
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