Optical waveguide and modulator and process for fabricating same

Details Optical waveguide and modulator and process for fabricating same Optical waveguide and modulator and process for fabricating same

1982-10-27

1984-03-27

Lovering, Richard D.

Compositions

Radioactive compositions

Nuclear reactor fuel

252 623GA, 350 9614, 357 91, G02B 5172, G02F 1015

Patent

active

044390041

ABSTRACT:
Disclosed is an improved optical waveguide and modulator and an ion implantation process for fabricating same. The process includes the step of implanting high energy protons in a suitable semiconductive substrate material, such as gallium arsenide, to form a semi-insulating wave guiding layer therein for efficiently sustaining light propagation. The relatively large difference between the refractive indices of the high resistivity proton implanted layer and of the underlying low resistivity substrate result in highly efficient coupling and modulation of light passing through the proton implanted layer. The letter is partly the result of the relatively high resistivity attainable by proton implantation and partly the result of the sharp profile of ion dosage versus proton implantation distance into the substrate.

REFERENCES:
patent: 3387163 (1968-06-01), Queisser
patent: 3395366 (1968-07-01), Snitzer et al.
patent: 3496029 (1970-02-01), King et al.
patent: 3542536 (1970-11-01), Flam et al.
Garmire et al., Optical Waveguiding in Proton-Implanted GaAs in Applied Physics Letters, vol. 21, No. 3, Aug. 1, 1972, pp. 87-88.
Foyt et al., "Isolation of Junction Devices in GaAs Using Proton Bombardment", in Solid State Electronics, Pergamon Press, Gt. Britain, vol. 12, 1969, pp. 209-214.
Hall et al., Observation of Propagation Cutoff and its Control in Thin Optical Waveguides, in Applied Physics Letter, vol. 17, No. 3, Aug. 1, 1970, pp. 127-129.
Hunsperger et al., "Anneal Behavior of Defects in Ion Implanted Galium Arsenide Diodes", Metallurgical Transactions, vol. 1, Mar. 1970, pp. 603-607.
Shifrin et al., "Effect of Ion-Implantation Damage on the Optical Reflection Spectrum of Gallium Arsenide", Applied Physics Letters, vol. 17, No. 7, Oct. 1, 1970, pp. 274-276.

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