Patent
1985-09-09
1987-11-24
LaRoche, Eugene R.
350 9611, 350 9612, G02B 610
Patent
active
047084235
ABSTRACT:
A coupling member between an input light wave guide transporting a main light beam and secondary light wave guides each transporting a part of the intensity of the main light beam. The coupling member is monolithically integrated with the wave guides on a semiconductor substrate. The coupling member comprises a plate having parallel surfaces perpendicular to the plane of the substrate. The plate has a refractive index different from that of the main light wave guide. The parallel surfaces of the plate form interfaces separating the propagation medium of the wave guides (I, R, T) from the propagation medium constituted by the plate.
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Buchmann, P., et al. "Optical Y-Junctions and S-Bends formed by Preferentially Etched Single-Mode RIB Waveguides in InP," Elec. Lett., vol. 18, No. 19, pp. 850-852 (Sep. 16, 1982).
Chane, J. P., et al. "Etude de L'Epitaxie Localisee du GaAs," J. Crys. Growth, vol. 13/14, pp. 325-330 (1972).
Erman, M., et al. "Low Loss Waveguides Grown on GaAs Using Localized Vapor Phase Epitaxy," Appl. Phys. Lett, vol. 43, No. 10, pp. 894-895 (Nov. 15, 1983).
Erman Marko
Theeten Jean-Bernard
Vodjdani Nakita
LaRoche Eugene R.
Mottola Steven J.
Schechter Marc D.
U.S. Philips Corp.
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