Optical trigger thyristor and fabrication method

Details Optical trigger thyristor and fabrication method Optical trigger thyristor and fabrication method

1996-05-16

1998-09-08

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With light activation

257118, 257113, H01L 2974, H01L 31111

Patent

active

058048413

ABSTRACT:
An optical trigger thyristor having a light receiving portion 8 constructed of an n-type base layer front surface portion 5, a p-type semiconductor region 6, and a p-type front surface layer 7. The p-type front surface layer 7 is disposed so that it connects the front surfaces of the p-type semiconductor region 6 and a p-type base layer 3 and covers the exposed surface of the n-type base layer front surface portion 5. As a result, the n-type base layer front surface portion, which tends to be easily contaminated, is covered by the p-type front surface layer. Thus, contamination of the n-type base layer front surface is prevented. Consequently, the concentration of impurities in the front surface portion of the n-type base layer does not vary. Thus, there is high arc sensitivity without deterioration of the voltage blocking characteristic.

REFERENCES:
patent: 3832732 (1974-08-01), Roberts
patent: 4389534 (1983-06-01), Winterling
patent: 5061977 (1991-10-01), Funaba
patent: 5083177 (1992-01-01), Tuerkes
patent: 5455434 (1995-10-01), Pfirsch
Patent Abstracts of Japan, vol. 006, No. 103 (E-112), Jun. 12, 1982, JP-57 035372, Feb. 25, 1982.

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