Optical transmitter, optical receiver, and manufacturing...

Optical communications – Transmitter – Having particular modulation

Reexamination Certificate

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C398S182000, C398S185000, C398S186000, C398S187000, C398S202000, C398S214000, C398S130000, C398S135000, C359S245000, C359S248000, C359S237000, C359S254000, C385S002000, C385S003000, C385S004000, C385S008000, C385S014000

Reexamination Certificate

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07136595

ABSTRACT:
An optical transmitter-receiver is provided which is suitable for a high-speed optical communication system. A high-frequency electric line on a mounting substrate becomes a traveling-wave electrode of a semiconductor optical element equivalently by the following steps: separately manufacturing the mounting substrate having the high-frequency electric line, and the semiconductor optical element for which high-frequency design has been applied beforehand; and then bonding and mounting of drive electrodes of the mounting substrate and the semiconductor optical element through a soldering material. In addition, it is also possible to have a configuration in which not only junction down mounting of high-frequency semiconductor optical elements, but also that of an electronic element for electrically driving and controlling a light source such as a semiconductor laser and for electrically driving and controlling a high-frequency semiconductor optical element, is performed on the mounting substrate.

REFERENCES:
patent: 5835646 (1998-11-01), Yoshimura et al.
patent: 6057954 (2000-05-01), Parayanthal et al.
patent: 2002/0109897 (2002-08-01), Mirshekar-Syahkal et al.
patent: 06-160788 (1992-11-01), None
K. Kawano, M. Kohtoku, M. Ueki, T. Ito, S. Kondoh, Y. Noguchi and Y. Hasumi, “Polarisation-insensitive Travelling-wave Electrode Electroabsorption (TW-EA) Modulator with Bandwidth Over 50 GHz and Driving Voltage Less than 2V”, Electronic Letters, Aug. 28, 1997, vol. 33, No. 18, pp. 1580-1581.
L. Morl, D. Hoffmann, K. Matzen, C. Bornholdt, G.G. Mekonnen, F. Reier, “Traveling Wave Electrodes for 50 GHz Operation of Opto-Electronic Devices Based on InP”, IEEE, 11thInternational Conference on Indium Phosphide and Related Materials, May 16-20, 1999, pp. 385-388.

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