Optical transistor structure

Details Optical transistor structure Optical transistor structure

1978-09-15

1980-08-05

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 18, 331 945H, H01S 3319

Patent

active

042164850

ABSTRACT:
An optical power transistor comprises a gallium arsenide laser diode disposed on the surface of a semiconductor diode. The ends of the laser diode are angled so that the laser radiation generated in the Fabry-Perot cavity is directed onto the surface of the semiconductor diode for creating electron hole pairs therein and thereby creating electrical current therethrough. In another embodiment, prism means are disposed on the ends of the laser diode for directing the laser radiation onto the semiconductor diode.

REFERENCES:
patent: 3290539 (1966-12-01), LaMorte
patent: 3881113 (1975-04-01), Rideout
patent: 3958265 (1976-05-01), Charmakadze
patent: 4053914 (1977-10-01), Goodwin
patent: 4092614 (1978-05-01), Sakuma

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