Optical waveguides – Temporal optical modulation within an optical waveguide – Electro-optic
Reexamination Certificate
2007-03-06
2007-03-06
Connelly-Cushwa, Michelle (Department: 2874)
Optical waveguides
Temporal optical modulation within an optical waveguide
Electro-optic
C385S131000, C257S083000, C257S084000
Reexamination Certificate
active
11040362
ABSTRACT:
An optical transistor is disclosed. An apparatus according to aspects of the present invention includes optical waveguide disposed in semiconductor material. A diode structure is disposed in the optical waveguide. The diode structure includes P and N regions. An electrical switch coupled to the P region and the N region of the diode structure. The electrical switch is coupled to switchably short circuit the P and N regions of the diode structure together.
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Liu et al., “A High-Speed Silicon Optical Modulator Based on a Metal-Oxide-Semiconductor Capacitor,” Nature Publishing Group, London GB, Feb. 12, 2004, vol. 427, pp. 615-618.
Rong et al., “Raman Gain and Nonlinear Optical Absorption Measurements in a Low-Loss Silicon Waveguide,” Applied Physics Letters, American Institute of Physics, Melville, NY, USA, Sep. 20, 2004, vol. 85, No. 12, pp. 2196-2198.
Blakely , Sokoloff, Taylor & Zafman LLP
Connelly-Cushwa Michelle
Intel Corporation
Rahll Jerry T
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