Optical transistor

Optical waveguides – Temporal optical modulation within an optical waveguide – Electro-optic

Reexamination Certificate

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Details

C385S131000, C257S083000, C257S084000

Reexamination Certificate

active

11040362

ABSTRACT:
An optical transistor is disclosed. An apparatus according to aspects of the present invention includes optical waveguide disposed in semiconductor material. A diode structure is disposed in the optical waveguide. The diode structure includes P and N regions. An electrical switch coupled to the P region and the N region of the diode structure. The electrical switch is coupled to switchably short circuit the P and N regions of the diode structure together.

REFERENCES:
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patent: 6829262 (2004-12-01), Ackerman et al.
patent: 2003/0021568 (2003-01-01), Samara-Rubio et al.
patent: 2003/0142943 (2003-07-01), Yegnanarayanan et al.
patent: 2004/0099870 (2004-05-01), Ono et al.
patent: 2004/0212874 (2004-10-01), Kim et al.
patent: 2006/000681 (2006-05-01), None
Liu et al., “A High-Speed Silicon Optical Modulator Based on a Metal-Oxide-Semiconductor Capacitor,” Nature Publishing Group, London GB, Feb. 12, 2004, vol. 427, pp. 615-618.
Rong et al., “Raman Gain and Nonlinear Optical Absorption Measurements in a Low-Loss Silicon Waveguide,” Applied Physics Letters, American Institute of Physics, Melville, NY, USA, Sep. 20, 2004, vol. 85, No. 12, pp. 2196-2198.

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