Optical techniques of measuring endpoint during the processing o

Details Optical techniques of measuring endpoint during the processing o Optical techniques of measuring endpoint during the processing o

1997-06-11

1999-04-06

Dang, Thi

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

216 88, B24D 1700, G01N 2100

Patent

active

058913521

ABSTRACT:
In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

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