Optical system including wavelength-tunable semiconductor laser

Details Optical system including wavelength-tunable semiconductor laser Optical system including wavelength-tunable semiconductor laser

1989-05-30

1990-12-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 50, H01S 319

Patent

active

049808923

ABSTRACT:
Optical systems which include a particular type of wavelength-tunable semiconductor laser are disclosed. Significantly, the active layer of the laser includes a doping superlattice layer. Even more significantly, wavelength-tunability is achieved by nonuniformly, optically and/or electrically pumping the laser.

REFERENCES:
patent: 4839899 (1989-06-01), Burnham et al.
B. Brobert et al., "Widely Tunable Bragg Reflector Integrated Lasers in InGaAsp-InP," Applied Physics Lett. 52(16), Apr. 18, 1988, pp. 1285-1287.
G. H. Dohler, "Doping Superlattices" (n-i-p-i Crystals), IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, Sep. 1986, pp. 1682-1694.
E. F. Schubert et al., "GaAs Sawtooth Superlattice Laser Emitting at Wavelengths .lambda.>0.9 um," Applied Physics Letters, vol. 47, No. 3, Aug. 1, 1985, pp. 219-221.
B. A. Vojak et al., "Photopumped Laser Operation of GaAs Doping Superlattices," Applied Physics Letters, vol. 48, No. 3, Jan. 20, 1986, pp. 251-253.

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