Optical Switching device

Details Optical Switching device Optical Switching device

1994-09-07

1996-12-03

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257459, 257466, 385 18, 385 21, H01L 3100, G02B 626

Patent

active

055811086

ABSTRACT:
Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.

REFERENCES:
Hiroaki Inoue et al., "An 8mm Length Nonblocking 4x4 Optical Switch Array", IEEE J. on Selected Areas in Communications, vol. 6, No. 7, Aug. 1988, pp. 1262-1266.
Kiyohide Wakao et al., "InGaAsP/InP Optical Switches Embedded with Semi-Insulating InP Current Blocking Layers", IEEE J. on Sel. Areas in Comm., vol. 6, No. 7, Aug. 1988, pp. 1199-1204.
K. Ishida et al., "InGaAsP/InP optical Switches Using Carrier Induced Refractive Index Change", Appl. Phy. Lett., vol. 50, pp. 141-143, (1987).

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