Optical: systems and elements – Optical frequency converter
Patent
1992-07-17
1995-12-19
Lee, John D.
Optical: systems and elements
Optical frequency converter
257 22, 257 15, G02F 135
Patent
active
054773776
ABSTRACT:
The present invention relates to novel optical devices operating in the infrared, based on indirect narrow-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light intensities with efficient optical switching and optical limiting at high intensities, and (2) wideband infrared detectors with high collection efficiency and low tunneling noise currents, suitable for use in longwave infrared focal plane arrays. INGS comprise multiple semimetal/semiconductor layers having compatible crystal symmetry across each heterojunction between a given semimetal and the adjoining semiconductor, wherein each semimetal layer sandwiched between semiconductor layers is grown thin enough that each semimetal layer becomes a semiconductor, and wherein each semiconductor layer is thin enough that there is coupling between adjacent semiconductor layers. The present invention utilizes INGS, which are fabricated to meet the criteria E.sub.g.sup.ind <h.omega.<E.sub.g.sup.dir, especially where h.omega.<100 meV, as the optical material for optical switches. The present invention also utilizes INGS as optical detectors if they are fabricated such that E.sub.g.sup.ind <E.sub.g.sup.dir <h.omega., especially where h.omega. is less than 155 meV.
REFERENCES:
patent: 4250515 (1981-02-01), Esaki et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4616241 (1986-10-01), Biefeld et al.
patent: 4806993 (1989-02-01), Voisin et al.
patent: 4916495 (1990-04-01), Awano
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5159421 (1992-10-01), Wolff
A. Y. Cho and P. D. Dernier, "Single-crystal-aluminum Schottky-barrier dis prepared by molecular-beam epitaxy (MBE) on GaAs," J. Appl. Phys. 49(6), Jun. 1978, pp. 3328-3332.
Peter C. Sercel and Kerry J. Vahala, "Type II broken-gap quantum wires and quantum dot arrays: A novel concept for self-doping semiconductor nanostructures," Appl. Phys. Lett. 57 (15) Oct. 8, 1990, pp. 1569-1571.
J. T. Zborowski et al., "Epitaxial and Interface Properties of InAs/InGaSb Multilayered Structures," J. Appl. Phys. 71(12), Jun. 15, 1992, pp. 5908-5912.
A. Y. Cho and P. D. Dernier, J. Appl. Phys., 49:3328 (Jun. 1978).
J. Massies, P. Delescluse, P. Etienne and N. T. Linh, Thin Solid Films, 90, 113 (1982) (No Month).
J. R. Waldrop and R. W. Grant, Appl. Phys. Lett., 34, 630 (May 1979).
G. A. Prinz and J. J. Krebs, Appl. Phys. Lett., 39:397 (Sep. 1981).
G. A. Prinz, Phys. Rev. Lett., 54, 1051 (Mar. 1985).
C. J. Palmstrom, N. Tabatabaie, and S. J. Allen, Jr., Appl. Phys. Lett., 53, 2608 (Dec. 1988).
R. Fasche, J. T. Zborowski, T. D. Golding, H. D. Shih, P. C. Chow, K. Matsuichi, B. C. Covington, A. Chi, J. Zheng, and H. F. Schaake, Jour. Cryst. Growth, 111, 677 (1991). (No Month).
T. D. Golding, H. D. Shih, J. T. Zborowski, W. C. Fan, P. C. Chow, A. Vigliante, B. C. Covington, A. Chi, J. M. Anthony and H. F. Schaake, J. Vac. Sci. Tech., B10(2) (Mar./Apr. 1992) 880-884.
J. T. Zborowski, W. C. Fan, T. D. Golding, A. Vigliante and P. C. Chow, J. Appl. Phys. 71 (12) (Jun. 1992) 5908-5912.
T. D. Golding, J. A. Dura, H. Wang, J. T. Zborowski, A. Vigliante and J. H. Miller, Jr., Investigation of Sb/GaSb Multilayer Structures for Potential Application as an Indirect Narrow-Bandgap Material, Semicond. Sci. Technol. 8 (1993) S117-S120 (No Month).
M. A. Hollis, K. B. Nichols, R. A. Murphy, R. P. Gale, S. Rabe, W. J. Piacenti, C. O. Bozler and P. M. Smith, IEDM Tech. Digest, 102(1985). (No Month).
N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist, and V. G. Keramidas, Appl. Phys. Lett., 53, 2528 (Dec. 1988).
J. W. Sulhoff, J. L. Zyskind, C. A. Burrus, R. D. Feldman, and R. F. Austin, Appl. Phys. Lett., 56, 388 (Jan. 1990).
M. L. Huberman and J. Maserjian, Phys. Rev., 9065 (May 1988).
W. A. Little, Phys. Rev., 134, A1416 (Jun. 1964).
V. L. Ginzburg, Usp. Fiz. Nauk, 101, 185 (Jun. 1970). [Sov. Phys.-Usp., 13, 335 (Nov.-Dec. 1970)].
D. Allender, J. Bray, and J. Bardeen, Phys. Rev., B7, 1020 (Feb. 1973).
C. M. Varma, P. B. Littlewood, S. Schmidt-Rink, E. Abrahams, and A. E. Ruckenstein, Phys. Rev. Lett., 63, 1996 (Oct. 1989).
A. Virosztek and J. Ruvalds, Phys. Rev. Lett., 67, 1657 (Sep. 1991).
I. Bozovic, Phys. Rev., B42, 1969 (Aug. 1990).
I. Bozovic, J. H. Kim, J. S. Harris, Jr. and W. Y. Lee, Phys. Rev., B43, 1169 (Jan. 1991).
J. H. Kim, I. Bozozic, C. B. Eom, T. H. Geballe and J. S. Harris, Jr., Physica, C174, 435 (1991). (No Month).
J. P. Tidman and R. F. Frindt, Can. J. Phys., 54, 2306 (1976). (No Month).
F. J. DiSalvo and J. E. Graebner, Solid State Commun., 23, 825 (1977). (No Month).
R. V. Coleman, B. Drake, P. K. Hansma and G. Slough, Phys. Rev. Lett., 55, 394 (Jul. 1985).
A. I. Rusinov, D. Chan Kat and Yu V. Kopaev, Sov. Phys. JETP, 38, 991 (May 1974).
S. J. Allen, Jr. N. Tabatabaie, C. J. Palmstrom, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist and K. C. Garrison, Phys. Rev. Lett. 62, 2309 (May 1989).
T. Sands, Appl. Phys. Lett., 52, 197 (Jan. 1988).
J. P. Harbison, T. Sands, N. Tabataie, W. K. Chan, L. T. Florez, and V. G. Keramidas, Appl. Phys. Lett., 53, 1717 (Oct. 1988).
A. Zur and T. C. McGill, J. Appl. Phys., 55, 378 (Jan. 1984).
J. E. Cunningham, J. A. Dura and C. P. Flynn, in Metalic Multilayer and Epitaxy, ed. by M. Hong, S. Wolf and D. C. Gubser, Metallurgical Society Inc. (1988), No Month, pp. 77-95.
C. N. Berglund, IEEE Trans. Electron DEV.Ed-16, 432 (May 1969).
D. L. Mitchell, P. C. Taylor and S. G. Bishop, Solid State Comm. 9 1833 (1971). (No Month).
P. A. Wolff and S. Y. Auyang, Semicond. Sci. Technol. 5, S57 (1990). (No Month).
E. R. Youngdale, C. A. Hoffman, J. R. Meyer, F. J. Bartoli, J. W. Han, J. W. Cook, Jr., J. F. Schetzina, M. A. Engelhardt, E. W. Niles and H. Hochst, J. Vac. Sci. Technol. A 8, 1215 (1990). Mar./Apr.
E. R. Youngdale, C. A. Hoffman, J. R. Meyer, F. J. Bartoli, M. A. Engelhardt and H. Hochst, Semicond. Sci. Technol. 5, S253 (1990). (No Month).
E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli and A. Martinez, Solid State Comm. 80, 95 (1991). (No Month).
E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. L. Partin, C. M. Thrush and J. P. Heremans, Appl. Phys. Lett. 57:336 (Jul. 1990).
E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. L. Partin, C. M. Thrush and J. P. Heremans, Appl. Phys. Lett. 59, 756 (1991). Aug.
E. R. Youngdale, J. R. Meyer, F. J. Bartoli and C. A. Hoffman, Int. J. Nonlinear Opt. Phys., vol. 1, No. 3 (1992) 493, to 531. (No Month).
R. M. Broudy and V. J. Masurezyk, Semiconductors and Semimetals, vol. 18, ed. R. K. Willardson and A. C. Beer (Academic, N.Y., 1981), Chapter 5. (No Month).
M. B. Reine, A. K. Sood and T. J. Tredwell, Semiconductors and Semimetals, vol. 18, ed. R. K. Willardson and A. C. Beer (Academic, N.Y., 1981), Chapter 6. (No Month).
M. A. Kinch and M. W. Goodwin, J. Appl. Phys. 58, 4455 (Dec. 1985).
J. R. Meyer, F. J. Bartoli, E. R. Youngdale and C. A. Hoffman, J. Appl. Phys. 70, 4317 (Oct. 1991).
S. C. Shin, J. E. Hilliard and J. B. Ketterson, J. Vac. Sci. Technol. A2, 296 (1984). (Apr./Jun.).
A. diVenere, H. K. Wong, G. K. Wong and J. B. Ketterson, Superlatt. Microstruct. 1, 21 (1985). (No Month).
T. D. Golding, J. A. Dura, H. Wang, J. T. Zborowski, A. Vigliante, D. C. Chen, J. H. Miller, Jr. and J. R. Meyer, Semicond. Sci. Technol., 8 (1993) S117-S120. (No Month).
B. D. Cullity, Elements of X-ray Diffraction, Addison-Wesley 32-81 (2nd ed.) (No Date).
M. A. Herman and H. Sitter, Molecular Beam Epitaxy, Springer-Verlag (1989). (No Month) pp. 1-28.
J. P. Issi, Aust. J. Phys. 32, 585 (1979). (No Month).
K. Kash, P. A. Wolff and W. A. Bonner, Appl. Phys. Lett. 42, 173 (Jan. 1983).
K. Seeger, Semiconductor Physics (Springer-Verlag, New York, 1973), pp. 413-418. (No Month).
J. Heremans, D. T. Morelli, D. L. Partin, C. H. Olk, C. M. Thrush and T. A. Perry, Phys. Rev. B. 38, 10280 (Nov. 1988).
Bartoli Filbert J.
Golding Terry D.
Hoffman Craig A.
Meyer Jerry R.
Miller, Jr. John H.
Lee John D.
The United States of America as represented by the Secretary of
University of Houston
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