Optical storage medium utilizing electron trapping film layers s

Details Optical storage medium utilizing electron trapping film layers s Optical storage medium utilizing electron trapping film layers s

1994-07-08

1996-03-26

Epps, Georgia Y.

Dynamic information storage or retrieval

Specific detail of information handling portion of system

Radiation beam modification of or by storage medium

369288, 428690, 428691, 4304951, 430942, 2504844, 365106, G11C 1300, G11B 370, G03C 100

Patent

active

055027067

ABSTRACT:
A three-dimensional optical memory based on stacked thin film electron trapping layers. Each thin film electron trapping layer is sandwiched between pairs of insulating layers and transparent electrodes. When an electric field is applied across the electron trapping layer via the electrodes, the electron trapping process is enhanced. In this way, electrical page addressing can be achieved for writing data to the memory. The data are read out by an IR light directed into the electron trapping film from the edge, again preferably with the application of an electric field across the addressed layer to enhance readout. The application of an electric field across an addressed layer during the writing and reading steps effectively eliminates inter-page crosstalk.

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X. Yang et al. "Three-Dimensional Optical Memory Based On Transparent Electron Trapping Thin Films", Proc. SPIE, vol. 1773, Photonic Neural Networks, 1992, pp. 413-421.
X. Yang et al. "Three-dimensional Optical Memory Employing Electron Trapping Materials", Proc. SPIE, vol. 1662, Image Storage and Retrieval Systems, 1992, pp. 175-185.
Joseph Lindmayer, "Electronic Optical-Storage technology Approaches Development phase", Laser Focus World, Nov. 1989 pp. 119-121.

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