Optical storage medium comprising a mask layer with a super...

Details Optical storage medium comprising a mask layer with a super... Optical storage medium comprising a mask layer with a super...

2007-10-11

2011-11-29

Mulvaney, Elizabeth (Department: 1785)

Stock material or miscellaneous articles

Circular sheet or circular blank

C428S064400, C428S064500, C430S270120

Reexamination Certificate

active

08067079

ABSTRACT:
The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.

REFERENCES:
patent: 6339582 (2002-01-01), Ichihara et al.
patent: 6667146 (2003-12-01), Ogimoto et al.
patent: 2003/0193857 (2003-10-01), Ichihara et al.
patent: 2004/088644 (2004-10-01), None
Shi et al. “Super-Resolution Near Field Phase Change Disk with Sb70Te30 Mask Layer”, Japanese Journal of Applied Physics, vol. 43, No. 7B, 2004, pp. 5001-5005, XP002445699.
Shima et al. “Optical Nanotechnologies—The Manipulation of Surface and Local Plasmons”, Feb. 19, 2004, Springer Berlin Heidelberg, XP002445709, pp. 49-57.
Search Report Dated Nov. 22, 2007.

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