Optical single crystal film, process for producing the same and

Details Optical single crystal film, process for producing the same and Optical single crystal film, process for producing the same and

1997-11-12

2000-04-18

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117 11, 117 54, 117 73, 117906, 117918, 117948, C30B 3306

Patent

active

060510625

ABSTRACT:
In producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method, this process contains the steps of: annealing the film at a predetermined temperature in an ozonic atmosphere; and temperature-increasing and -decreasing to and from the predetermined temperature, wherein at least one of temperature-increasing and -decreasing steps, the film is exposed to a substantially ozone-free atmosphere.

REFERENCES:
patent: 3607752 (1971-09-01), Erlenbach
patent: 3867185 (1975-02-01), Primak
patent: 4196963 (1980-04-01), Chen et al.
patent: 4640736 (1987-02-01), Holman
patent: 5209917 (1993-05-01), Ohno et al.
patent: 5426310 (1995-06-01), Tamada et al.
Yamada, A., Tamada, H., Saitoh, M., "Liquid Phase Epitaxial Growth of LiNbO3 Thin Film Using Li2O-B2O3 Flux Sysytem," Journal of Crystal Growth, vol. 132 (1993), pp. 48-60, 1993.

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