Optical sensor, solid-state imaging device, and operating...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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C250S208100

Reexamination Certificate

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07821560

ABSTRACT:
In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photo diode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.

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S. Inoue et al., “A 3.25M-pixel APS-C size CMOS Image Sensor,” IEEE Workshop on CCDs and Advanced Image Sensor, 2001, pp. 16-19.
Y. Muramatsu et al., “A Signal-Processing CMOS Image Sensor Using a Simple Analog Operation,” IEEE Journal of Solid-State Circuits, vol. 38:1, Jan. 2003, pp. 101-106.
The Journal of the Institute of Image Information and Television Engineers, vol. 57, 2003.

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