Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-03-24
1994-02-01
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257231, 257239, 257246, H01L 29796
Patent
active
052834514
ABSTRACT:
The invention relates to photosensitive semiconductor devices and, more particularly, to linear arrays having several parallel rows of photoconductive points and operating in the integration and charge carry mode. In particular, the object of the invention is to reduce a smearing effect.
The device of the invention comprises a photosensitive surface (SP) divided into photosensitive surface elements (SI1 to SMn) placed in rows (L1 to Ln) and in columns (C1 to CM). Each column forms a shift register that ends in a storage space (CS1 to CSM) of a readout register (RL) formed by a shift register of the charge transfer type: readout register (RL) being on same semiconductor substrate (10) as photosensitive surface (SP) the device includes.
According to a feature of the invention, the device an intermediate zone (ZI) protected from light used to make a separation distance (DS) between photosensitive surface (SP) and readout register (RL).
REFERENCES:
patent: 3971003 (1976-07-01), Kosonocky
patent: 4178614 (1979-12-01), Sauer
patent: 4758895 (1988-07-01), Elabd
patent: 4903284 (1990-02-01), Esser
patent: 5114237 (1992-05-01), Cazaux
Patent Abstracts of Japan, vol. 11, No. 88 (E-490) (2535), Mar. 18, 1987, & JP-A-61-242-067, Oct. 28, 1986, N. Minotani, "Photosensor".
Patent Abstracts of Japan, vol. 5, No. 70 (E-56) (742), May 12, 1981, & JP-A-56-18-472, Feb. 21, 1981, H. Takemura, "Solid-State Image Pickup Device".
Munson Gene M.
Thomson Composants Militaires et Spatiaux
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