Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-14
2008-07-29
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S778000
Reexamination Certificate
active
07405456
ABSTRACT:
The present invention relates to an optical sensor chip package in a cavity of forming frame thereof and has a gap between protection layer and optical sensor chip. The optical sensor chip avoids accepting the pressure from protection layer that damage the reliability between pads and metallic traces when protection layer lay on the forming frame. It improves drawbacks of the glue pass trough the gap between optical sensor chip and pads into the optical sensor area of optical sensor chip. It improves the high process yield and reduces the height of optical sensor chip package to achieve lightly and thinly.
REFERENCES:
patent: 5867368 (1999-02-01), Glenn
patent: 6774481 (2004-08-01), Ono
patent: 6984866 (2006-01-01), Mostafazadeh et al.
patent: 7030471 (2006-04-01), Perillat
Chen Mao-Jung
Chen Po-Hung
Lo Chin-Cheng
Potter Roy K
Sigurd Microelectronics Corp.
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