Optical sensor apparatus

Details Optical sensor apparatus Optical sensor apparatus

1977-07-25

1979-08-21

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 23, 357 30, 357 61, 250211J, H03K 342, H01L 2978, H01L 2714, H01L 3100

Patent

active

041654714

ABSTRACT:
A light sensing apparatus is described which employs a GaAsP MOS light-receiving element to which a potential is applied for creating a depletion region. Upon exposure, minority carriers are generated and trapped. Light levels are sensed by a charge injection technique which results in a characteristic charge or voltage, the magnitude of which is proportional to the total exposure during the sensing period.

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patent: 4034396 (1977-07-01), Nakamura et al.
Ahrenkiel et al., "Low Dark-Current MOS Photodiodes Using GaAs.sub.0.6 P.sub.0.4," J. Applied Physics, vol. 48 (1/77), pp. 267-269.
Ikoma et al., "C-V Characteristics of GaP MOS Diode with Anodic Oxide Film," IEEE Trans. Electron Devices, vol. ED-23 (5/76), pp. 521-523.
Hartnagel, "MOS-Gate Technology on GaAs and Other III-V Compounds," J. Vac. Sci. Technol., vol. 13 (7-8/76), pp. 860-867.
Forbes et al., "Characteristics and Potential Applications of GaAs.sub.1-x P.sub.x MIS Structures," Solid-State Electronics, vol. 17 (1/74), pp. 25-29.

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