Optical sensor

Details Optical sensor Optical sensor

1989-07-31

1990-10-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 30, H01L 3118

Patent

active

049652125

ABSTRACT:
A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second layer overlying the first layer and being transparent to optical energy. As a result of using hydrogenated amorphous-silicon, the photosensitive diode element according to the present invention has characteristics of high photoconductivity, controllably variable optical gap, and thin film structure. A photosensitive diode array formed from the subject diode elements is easily fabricated, employs straightforward circuitry for addressing each diode element, and is characterized by low crosstalk between elements, maximized optical sensitivity and broad dynamic range.

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"Progress in amorphous-silicon photovoltaic-device research"; Brebner et al.; 1984; Departement de physique, universite de Montreal; Canada.
"High Efficiency a-Si:H Mis Solar Cells"; Aktik et al.; Departement de genie physique; Ecole Polytechnique, Montreal; Canada.

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