Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-12-31
2010-10-19
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S290000
Reexamination Certificate
active
07816751
ABSTRACT:
An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.
REFERENCES:
patent: 6310371 (2001-10-01), Hung
patent: 7259055 (2007-08-01), Li
patent: 2006/0180816 (2006-08-01), Li
patent: 2006/0211267 (2006-09-01), Joshi
patent: 2008/0179762 (2008-07-01), Cho et al.
patent: 1706050 (2005-12-01), None
Cho An-Thung
Lin Kun-Chih
Peng Chia-Tien
AU Optronics Corp.
Hsu Winston
Margo Scott
Prenty Mark
Teng Min-Lee
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