Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2007-06-26
2007-06-26
McNeil, Jennifer (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S448000, C428S698000, C428S702000, C428S704000, C257S290000
Reexamination Certificate
active
10973251
ABSTRACT:
An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.
REFERENCES:
patent: 4782377 (1988-11-01), Mahan
patent: 5958505 (1999-09-01), Mantl
patent: 6288415 (2001-09-01), Leong et al.
patent: 6569534 (2003-05-01), Yamaguchi et al.
patent: 6835959 (2004-12-01), Ouchi
patent: 41 36 511 (1991-11-01), None
patent: 2 318 680 (1996-10-01), None
patent: 2001-230443 (2000-02-01), None
patent: 2000312055 (2000-11-01), None
patent: 2003046100 (2003-02-01), None
patent: 2003243426 (2003-08-01), None
M. A. Lourenco et al., “Electroluminescence of β-FeSi2Light Emitting Devices”, Jpn. J. Appl. Phys., vol. 40 (2001), pp. 4041-4044.
Yoshihito Maeda et al., “Effects of Uniaxial Lattice Deformation on Optical and Photoelectric Responses of IBS β-FeSi2”, Proceedings of Japan-UK Joint Workshop on Kankyo-Semiconductors, pp. 29-31.
T. Suemasu et al., “Influence of Si Growth Temperature for Embedding β-FeSi2and Resultant Strain in β-FeSi2on Light Emission from p-Si/ β-FeSi2Particles
-Si Light-Emitting Diodes”, Applied Physics Letters, vol. 79, No. 12 (Sep. 17, 2001), pp. 1804-1806.
Shucheng Chu et al, “Room-Temperature 1.56 μm Electroluminescence of Highly Oriented β-FeSi2/Si Single Heterojunction Prepared by Magnetron-Sputtering Deposition”, Jpn. J. Appl. Phys., vol. 41 (2002), pp. L1200-L1202.
Shinan Wang et al., “Prototype Infrared Optical Sensor and Solar Cell Made of beta-FeSi2Thin Film”, SPIE, vol. 5065, p. 188.
Liu Zhengxin
Makita Yunosuke
Nakayama Yasuhiko
Tanoue Hisao
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Kankyo Semi-Conductors
McNeil Jennifer
National Institute of Advanced Industrial Science and Technology
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