Optical semiconductor module

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S050100, C372S054000

Reexamination Certificate

active

06967980

ABSTRACT:
A semiconductor laser diode, in which an active layer is formed close to a bottom surface thereof, is fixed to a top surface of a substrate by means of solder layers in such a condition that the bottom surface of the semiconductor laser diode faces the top surface of the substrate, which is covered with a SiO2layer. The active layer is interposed between a pair of V grooves. The right and left solder layers partially fill a clearance formed between the bottom surface of the semiconductor laser diode and the top surface of the substrate, leaving a vacant space in the vicinity of the active layer and the V grooves. Accordingly, the distortion of and the residual stress exerted on the active layer can be decreed noticeably, so that the operation of an optical semiconductor module can be stabilized.

REFERENCES:
patent: 5729561 (1998-03-01), Hironaka
patent: 6075800 (2000-06-01), Spear
patent: 6212212 (2001-04-01), Honmou
patent: 6271942 (2001-08-01), Sasai et al.
patent: 6353625 (2002-03-01), Yoneda
patent: 6647050 (2003-11-01), Yuen et al.
patent: 07-249798 (1995-09-01), None
patent: 09-051108 (1997-02-01), None
patent: 9-64479 (1997-03-01), None
patent: 11-068253 (1999-03-01), None
patent: 11-087849 (1999-03-01), None
patent: 11-220218 (1999-08-01), None
European Search Report dated Jul. 7, 2004.
Japanese Office Action dated Mar. 25, 2005 with an English translation.

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