Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-09-12
2006-09-12
Hollington, Jermele (Department: 2829)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S762010
Reexamination Certificate
active
07106090
ABSTRACT:
An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
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Bader Stefan
Bolay Helmut
Eisert Dominik
Hahn Berthold
Harle Volker
Hollington Jermele
Nguyen Trung Q.
Osram Opto Semiconductors GmbH
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