Optical semiconductor device with low reflectance coating

Details Optical semiconductor device with low reflectance coating Optical semiconductor device with low reflectance coating

2005-09-20

2005-09-20

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S013000, C257S079000, C257S098000, C257S184000

Reexamination Certificate

active

06946684

ABSTRACT:
An optical semiconductor device includes a semiconductor laser having an equivalent refractive index nc; and a low-reflective coating film disposed on one end face of the semiconductor laser. The low-reflective coating film includes a first-layer coating film having a refractive index n1and a thickness d1; and a second-layer coating film having a refractive index n2and a thickness d2. n0and λ0denote refractive index of free space on a surface of the second-layer coating film and the wavelength of laser light produced by the semiconductor laser. Both a real part and an imaginary part of amplitude reflectance, determined by the wavelength λ0, the refractive indexes n1and n2, and the thicknesses d1and d2, are zero and only one of refractive indexes n1and n2is smaller than the square root of a product of the refractive indexes nc and n0.

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