Optical semiconductor device with InP

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 96, 257 97, 257102, 257103, 372 45, 372 46, 372 47, 372 48, H01L 3300

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active

059124750

ABSTRACT:
An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.

REFERENCES:
Aoki et al., "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Miyazaki et al., "Novel Current-Blocking Structure For High-Speed EA-Modulator/DFB-LD Integrated Light Source", Tenth International Conference on Integrated and Optical Fibre Communication Technical Digest, vol. 4, Jun. 1995, pp. 60-61.

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