Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2008-09-30
2008-09-30
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S098000, C257S099000
Reexamination Certificate
active
10559447
ABSTRACT:
An optical semiconductor device (A1) includes a light reflector (5) and an optical semiconductor chip (3). The reflector (5) includes two first reflecting surfaces (50a) spaced from each other in direction x, and two second reflecting surfaces (50b) spaced from each other in direction y. The chip (3) includes a rectangular upper surface and a rectangular lower surface spaced from each other in direction z perpendicular to both of the directions x and y. The chip (3) further includes at least one light-emitting surface (31) extending between the upper and the lower surfaces. The light-emitting surface (31) faces a corresponding one of the second reflecting surfaces (50b). The light-emitting surface (31) is non-parallel to the corresponding second reflecting surfaces (50b) as viewed in parallel to the direction z.
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Bernstein Allison P
Elms Richard T.
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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