Optical Semiconductor device with carrier recombination layer

Details Optical Semiconductor device with carrier recombination layer Optical Semiconductor device with carrier recombination layer

1997-03-26

1999-06-29

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 257 14, H01S 319

Patent

active

059178469

ABSTRACT:
A p-InP buffer layer is formed on a p-type InP substrate. A selective growth layer consisted of a p-InP clad layer, a SCH-strained MQW layer, and an n-InP clad layer sequentially in stripe form is formed on the buffer layer. On the surface of the buffer layer at both sides of the selective growth portion, a p-InP buried layer, an n-InP blocking layer, a p-InP blocking layer and SCH-MQW carrier recombination layer are selectively grown in the sequential order in a manner that those layer are not grown on the upper surface of the selective growth portion. With burying upper portions of these layers, an n-InP clad burying layer, and an n-InGaAsP contact layer are formed. Then, a surface electrode is formed with covering the entire surface. Also, a back surface electrode is formed on the backside surface of the p-type InP substrate.

REFERENCES:
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patent: 5636237 (1997-06-01), Terakado et al.
T. Terakado et al.; "Extremely Low Trhresholds (O.4mA @ 20'C, 3.0mA @85'C) . . . TBP"; 14th Laser Conference, paper PD9 (1994), pp. 21-22.
Y. Sakata et al.; "Improved performance of MQW BH-LDs with current blocking structure fabricated . . . process"; Tech. Digest of IOOC '95, paper FB2-3, (1995), pp. 46-47.
Japanese Office Action dated Mar. 24, 1998 with English language translation of Japanese Examiner's comments.
Sakata, Y., et al., "All selective MOVPE grown 1.3.mu.m strained MQW BH-LDs," Technical Report of IEICE, vol. 95, No. 294, pp. 39-44, Oct. 17, 1995.
Sakata, Y., et al., "All Selective MOVPE Grown BG-LD's Fabricated by the Novel Self-Alignment Process," IEEE Photonics Technology Letters, vol. 8, No. 2, pp. 179-181, Feb. 1996.

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