Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-04-19
2011-04-19
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C372S045010
Reexamination Certificate
active
07928472
ABSTRACT:
An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
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Ishimura Eitaro
Nakaji Masaharu
Yagyu Eiji
Dickey Thomas L
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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