Optical semiconductor device with a current blocking structure a

Details Optical semiconductor device with a current blocking structure a Optical semiconductor device with a current blocking structure a

1997-08-29

2000-10-17

Lee, John D.

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

385132, 438 31, 438481, 372 50, G02B 613

Patent

active

061343684

ABSTRACT:
Disclosed is an optical semiconductor device which has:

REFERENCES:
patent: 5284791 (1994-02-01), Sakata et al.
patent: 5360763 (1994-11-01), Nakamura
patent: 5382543 (1995-01-01), Nakamura et al.
patent: 5717710 (1998-02-01), Miyazaki et al.
"Electrical property of a p-n-i-n structure having an MOCVD-grown undoped Al.48In.52As layer as the i layer", Kimura et al., The Institute of a Applied Physics., Spring 1995.
Y. Sakata et al./Strained MQW-BH-LDs and intigrated devices fabricated by select MOVPE--Apr. 21, 1996--pp761-764/USLI Device Development Laboratories NEC Corporation.
"DFB-LD/Modulator Integrated Light Source By Bandgap Energy Controlled Selective Movpe " Kato et al Electronics Letters; Jan. 16, 1992; vol. 28. No. 2; pp. 153-154.
"Novel Structure MQW Electroabsorption Modulator/DFB-Laser Integrated Device Fabricated by Selective Area Mocvd Growth"; Aoki et al Electronics Letters; Nov. 7, 1991; vol. 27. No. 23; pp. 2138-2140.
"High-Power and High-Speed Semi-Insulating BH Structure Monolithic Electroabsorption Modulator/DFB Laser Light Source" Soda et al Electronics Letters; Jan. 4, 1990; vol. 26. No. 1; pp. 9-10.
"Chirp characteristics of an 1.55um DFB laser integrated electroabsorption modulator" Aoki et al Autumn Meeting C-96 of The Intitue of Elctronics; vol. 26, No. 1 pp. 4-176, 1993 (No month).
"Low Penalty transmission characteristics of packaged DFB-LD/modulator integrated light source with selectively grown window-facet structure fabricated by bandgap energy controlled selective MOVPE; Kato et al; Informations and Communications Engineers 1993" Spring Meeting C-226 of The Institue of Electronics, pp. 4-223, 1994 (No month).
"All selective MOVPE grown 1.3um strained MQW BH-LDs" Sakata et al The Institue of Electronics, Information and Communication Engineers; Technical Report of IEICE; LqE95-88(1995-10); pp. 39-44, Oct. 1995.
"Electrical peoperty of a p-n-i-n structure having an MOCVD-grown undoped Al.sub.0.48 IN.sub.0.52 As laye as the i layer" Kimura et al 30a-SZY-4; The institute of Applied Physics, Spring 1995.
"All Selective MOVPE Grown BH-LD's Fabricated by the Novel Self-Alignment Process" Sakata et al IEEE Photonics Technology Letters, vol. 8, No. 2, Feb. 1996; pp. 179-181.
Shinagaku Technical Report, vol. 95 No. 294, LQE-88, pp 39-44, 1995 (No month).

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