Optical semiconductor device provided with strained quantum well

Details Optical semiconductor device provided with strained quantum well Optical semiconductor device provided with strained quantum well

1997-04-17

1998-11-24

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 18, 257 22, 257 96, 257190, H01L 2906

Patent

active

058411526

ABSTRACT:
An optical semiconductor device provided with a strained quantum well layer uses a ternary mixed-crystal compound semiconductor substrate on which a strained quantum well layer sandwiched by barrier layers is formed.

REFERENCES:
patent: 4719155 (1988-01-01), Matsumoto
patent: 5045897 (1991-09-01), Ahlgren
patent: 5068868 (1991-11-01), Deppe et al.
patent: 5181086 (1993-01-01), Yoshida
patent: 5294833 (1994-03-01), Schetzina
"InGaAs strained quantum wells with a 1.3.mu.m band edge at room temperature", Appl. Phys. Lett 55(14), Oct. 1989, pp. 1436-1438, Melman et al.
Low Threshold 0.98 .mu.m Aluminium-Free Strained Quantum-Well InGaAs/InGaAsP/InGaP Lasers, Electronics Letters 29(1), Jan. 1993, pp. 1-2, Chang-Hasnain et al.
"Theoretical gain of strianed quantum well grown on an InGaAs ternary substrate", Appl. Phys. Lett. 63(6), Aug. 1993, pp. 712-714, Ishikawa.

Affiliated with

Also associated with

Rating

Optical semiconductor device provided with strained quantum well does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical semiconductor device provided with strained quantum well, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device provided with strained quantum well will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705886