Optical semiconductor device including InGaAlAs doped with Zn

Details Optical semiconductor device including InGaAlAs doped with Zn Optical semiconductor device including InGaAlAs doped with Zn

2005-02-08

2005-02-08

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C372S045013

Reexamination Certificate

active

06853015

ABSTRACT:
A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.

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patent: 20010006529 (2001-07-01), Komori et al.
patent: 20020071462 (2002-06-01), Takemoto et al.
patent: 7-131105 (1995-05-01), None
“Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAIAs multiple quantum well lasers” Uomi et al.,American Institute of Physics1987 pp. 78-80.
“Doping characteristics of undoped and Zn-doped In(Ga) AIAs layers grown by low-pressure metalorganic vapour phase epitaxy” Reier et al.,Journal of Crystal Growth 135(1994) pp. 463-468.
“Improved Behavior of Monolithically Integrated Laser/Modulator by Modified Identical Active Layer Structure,” P. Steinmann et al., IEEE 1997, p. 1561.
“Temperature Performance of 1.3-μm InGaAsP-InP Lasers with Different Profile of p-Doping” G.L. Belenky et al., IEEE 1997, pp. 1558-1560.

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