Optical semiconductor device including a multiple quantum well s

Details Optical semiconductor device including a multiple quantum well s Optical semiconductor device including a multiple quantum well s

1997-08-06

1999-09-14

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 22, 257 94, 257103, H01L 2906

Patent

active

059526734

ABSTRACT:
The optical semiconductor device comprises a multiple quantum well structure of an AlGaInAs system material formed on an InP semiconductor substrate. The multiple quantum well structure comprises a barrier layer of a below 1.0 .mu.m of PL wavelength and a below 4.5 nm of film thickness active layer alternately laid one on another. An above 0.5% compressive strain is applied to the active layer. Thus the AlGaInAs/InP system optical semiconductor can have good temperature characteristics.

REFERENCES:
patent: 5541949 (1996-07-01), Bhat et al.
C.E. Zah et al., "Low Threshold 1.3 .mu.m Strained-Layer A 1 x G a y I n 1-x-y A s / I n P Quantum Well Laster", IEE Electron. Lett, vol. 28, No. 25, pp.2323-2325, Dec. 1992.
C. E. Zah et al., "Low Threshold 1.3 .mu.m Strained-Layer A1 x GayIn 1-x-y As/InP Quantum Well Lasers", 13th International Semiconductor Laser Conference, K-5, pp.202-2-3, 1992.
C. E. Zah et al., "High-performance uncooled 1.3 .mu.m A 1 x G a y I n 1-x-y A s / I n P strained-layer quantum-well lasers for subscriber loop applications", IEEE J. Quantum Electron, vol. 30, No. 2, pp.511-523, Feb. 1994.
Z. Wang et al., "high speed, ultralow noise, tensile strained InGaA1As MQW lasers emitting at 1300 nm for optical communication and microwave applications", IEE Electron. Lett., vol. 30, No. 17, pp.1413-1414, Aug. 1994.
C. E. Zah et al., "High-performance uncooled 1.3 .mu.m A 2 x G a y I n 1-x-y A s / I n P strained-layer quantum-well lasers for fiber-in-the-loop applications", 94 OFC, pp.204-205, 1994.
Z. Wang et al., "High reliability, high-performance, low-cost coaxial laser module at 1.3 .mu.m for local-loop applications", 94 OFC, pp. 145--145, 1994.
C. E. Zah et al., "High-temperature modulation dynamics of 1.3 .mu.m A 1 x G a y I n 1-x-y A s / I n P compressive-strained multiple-quantum well lasers", 14th International Semiconductor Laser Conference, Th1.3, pp.215-216, 1994.
Z. Wang et al., "High speed, ultra low noise operation from -40.degree. C to 100.degree. C tensile strained InGaA1As MQW lasers emitting at 1300nm", 14th International Semiconductor Laser Conference, PD10, pp.23-24, Sep. 1994.
M.C. Wang et al., "Ultrahigh temperature and ultrahigh speed operation of 1.3 .mu.m strain-compensated A 1 G a I n A s / I n P uncooled laser diodes", IEE Electron. Lett. vol. 31, No. 18, pp. 1584-1585, Aug. 1995.

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