Optical semiconductor device having semiconductor laser and...

Details Optical semiconductor device having semiconductor laser and... Optical semiconductor device having semiconductor laser and...

2006-05-16

2006-05-16

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S084000, C257S085000, C372S026000, C372S050121, C372S703000

Reexamination Certificate

active

07045823

ABSTRACT:
An optical semiconductor device comprises a semiconductor laser (11) including a lower clad layer, an active layer (4), and an upper layer formed in this order, an electroabsorptive modulator (12) including the lower clad, a light absorption layer (6), and the upper clad layer formed in this order, and a separation region (13) provided between the semiconductor laser and the electroabsorptive modulator. The upper clad layer extends from the semiconductor laser through the separation region to the electroabsorptive modulator and up to the side of the separation region.

REFERENCES:
patent: 64-28984 (1989-01-01), None
patent: 07-94833 (1995-04-01), None
patent: 11-121787 (1999-04-01), None
patent: 2001-117058 (2001-04-01), None
patent: 2001-320124 (2001-11-01), None

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