Optical semiconductor device having diffraction grating...

Coherent light generators – Particular resonant cavity – Distributed feedback

Reexamination Certificate

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C372S045010, C372S049010, C372S050110, C372S092000, C372S098000, C372S102000

Reexamination Certificate

active

07835418

ABSTRACT:
An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A,15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.

REFERENCES:
patent: 7177335 (2007-02-01), Kamp et al.
patent: 7359423 (2008-04-01), Okunuki
patent: 7496127 (2009-02-01), Matsuda et al.
patent: 2005/0276302 (2005-12-01), Okunuki
patent: 2007/0133648 (2007-06-01), Matsuda et al.
patent: 8-167759 (1996-06-01), None
patent: 2005-353761 (2005-12-01), None

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