Optical semiconductor device having an epitaxial layer of...

Details Optical semiconductor device having an epitaxial layer of... Optical semiconductor device having an epitaxial layer of...

2006-01-10

2006-01-10

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S077000, C257S079000

Reexamination Certificate

active

06984840

ABSTRACT:
An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlxGa1-xN, wherein the AlGaN buffer layer has a carrier density in the range between 3×1018–1×1020cm−3, and the compositional parameter x is larger than 0 but smaller than 0.4 (0<x<0.4).

REFERENCES:
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5670798 (1997-09-01), Schetzina
patent: 5727008 (1998-03-01), Koga
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5747832 (1998-05-01), Nakamura et al.
patent: 5756374 (1998-05-01), Miura et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5834325 (1998-11-01), Motoki et al.
patent: 5903017 (1999-05-01), Itaya et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6165874 (2000-12-01), Powell et al.
patent: 6218269 (2001-04-01), Nikolaev et al.
patent: 6-232451 (1994-08-01), None
patent: 8-97471 (1996-04-01), None
patent: 8-203834 (1996-08-01), None
patent: 8-264835 (1996-10-01), None
patent: 8-264836 (1996-10-01), None
patent: 8-306958 (1996-11-01), None
patent: 8-330629 (1996-12-01), None
patent: 9-83016 (1997-03-01), None
patent: 10-22526 (1998-01-01), None
patent: 10-56236 (1998-02-01), None
patent: 10-114600 (1998-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 10-126006 (1998-05-01), None
patent: 10-135576 (1998-05-01), None
patent: 10-144612 (1998-05-01), None

Affiliated with

Also associated with

Rating

Optical semiconductor device having an epitaxial layer of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical semiconductor device having an epitaxial layer of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device having an epitaxial layer of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3577276