Optical semiconductor device having active layer of p-type...

Details Optical semiconductor device having active layer of p-type... Optical semiconductor device having active layer of p-type...

2007-10-22

2009-08-11

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C438S039000

Reexamination Certificate

active

07573060

ABSTRACT:
An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

REFERENCES:
patent: 5637511 (1997-06-01), Kurihara
N. Hatori, et al.; “20° C.-70° C. Temperature Independent 10 Gb/s Operation of a Directly Modulated Laser Diode Using P-doped Quantum Dots;”Technical Digest of 30thEuropean Conference on Optical Communication, post-deadline paper Th4.3.4; Sep. 5-9, 2004; 1 Sheet.

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