Optical semiconductor device having a semiconductor laminate mir

Details Optical semiconductor device having a semiconductor laminate mir Optical semiconductor device having a semiconductor laminate mir

1997-06-17

1999-07-27

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 98, 257432, 257436, H01L 2906, H01L 3300

Patent

active

059294612

ABSTRACT:
A surface emission semiconductor laser device has a semiconductor laminate mirror constituted of a plurality of pairs of InGaAS/InAlP films epitaxially grown on a GaAs or InGaAs substrate and a laser element bonded to the laminate mirror. The InAlP films of the laminate mirror are lattice-matched or not lattice-matched due to the amount of Al in the InAlP films. The laminate mirror has a high relative refractive index between the InGaAs and InAlP films and thus has a high reflectance to thereby improve the emission efficiency of the surface emission laser device.

REFERENCES:
patent: 5732098 (1998-03-01), Nisitani et al.

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