Optical semiconductor device having a multilayer reflection stru

Details Optical semiconductor device having a multilayer reflection stru Optical semiconductor device having a multilayer reflection stru

1997-08-29

1999-12-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 96, 359584, H01S 319, G02B 110

Patent

active

060027002

ABSTRACT:
A multilayer mirror includes a multilayer reflection structure formed of an alternate repetition of a first epitaxial layer of a first refractive index and a second epitaxial layer of a second refractive index larger than the first refractive index, wherein the second epitaxial layer includes a group III-V mixed crystal containing N as a group V element.

REFERENCES:
patent: 5719894 (1998-02-01), Jewell et al.
patent: 5815524 (1998-09-01), Ramdani et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 5883912 (1999-03-01), Ramdani et al.

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