Optical semiconductor device and optical semiconductor...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S096000

Reexamination Certificate

active

07738520

ABSTRACT:
An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a material and/or structure whose temperature dependence of the refractive index is different from that of a gain region of the semiconductor laser. In addition, they can be configured to have a plurality of interfaces formed along the waveguide direction of the optical waveguide so that the light reflected off the first interface is weakened by the light reflected from the remaining interfaces. Also, they can be configured with the interfaces inclined to the propagating direction so that the waveguide loss due to the reflection and refraction between the optical waveguides whose refractive indices differ from each other can be reduced.

REFERENCES:
patent: 3605037 (1971-09-01), D'Asaro et al.
patent: 4405236 (1983-09-01), Mitsuhashi et al.
patent: 4505539 (1985-03-01), Auracher et al.
patent: 4583227 (1986-04-01), Kirkby
patent: 5022042 (1991-06-01), Bradley
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5157468 (1992-10-01), Matsumoto
patent: 5617436 (1997-04-01), Lo
patent: 5719974 (1998-02-01), Kashyap
patent: 5838854 (1998-11-01), Taneya et al.
patent: 6163631 (2000-12-01), Kawanishi et al.
patent: 6208795 (2001-03-01), Nakano et al.
patent: 6320888 (2001-11-01), Tanaka et al.
patent: 6501776 (2002-12-01), Numai
patent: 6522794 (2003-02-01), Bischel et al.
patent: 6530698 (2003-03-01), Kuhara et al.
patent: 6580740 (2003-06-01), Funabashi et al.
patent: 6711323 (2004-03-01), Nayyer
patent: 2003/0044119 (2003-03-01), Sasaki et al.
patent: 31 31 232 (1982-04-01), None
patent: 0 790 682 (1997-08-01), None
patent: 1 089 108 (2001-04-01), None
patent: 55-123188 (1980-09-01), None
patent: 62-202583 (1987-09-01), None
patent: 01-025586 (1989-01-01), None
patent: 01-118806 (1989-05-01), None
patent: 02-074909 (1990-03-01), None
patent: 05-048198 (1993-02-01), None
patent: 06-338650 (1994-12-01), None
patent: 08-211342 (1996-08-01), None
patent: 09-036495 (1997-02-01), None
patent: 09-092924 (1997-04-01), None
patent: 09-331102 (1997-12-01), None
patent: 2000-019345 (2000-01-01), None
patent: 2000-223784 (2000-08-01), None
patent: 2000-223787 (2000-08-01), None
patent: 2002-014247 (2002-01-01), None
patent: 2002-076513 (2002-03-01), None
patent: 2002-328244 (2002-11-01), None
Abstract of Japanese Patent Publication No. 63-116485, published May 20, 1988.
T. Tanaka et al.,Hybrid Integrated External Cavity Laser without Temperature Dependent Mode Hopping,Electronics Letters, vol. 35, No. 2, Jan. 21, 1999, pp. 149-150.
Takeshi Kurosaki et al.,A Method for Reduction in Internal Reflection of Monolithically Integrated Optical Devices with Butt-Jointed Optical Waveguides,C-I, vol. J79-C-I, No. 12, Dec. 25, 1996, pp. 482-483 (with concise English translation).
Yoshiaki Nakano et al.,Analysis of DFB, and DBR Lasers Coupled to Fabry-Perot Resonator with Consideration on Their Temperature Compensation Properties,Department of Electronic Engineering, University of Tokyo, Jul. 24, 1985, pp. 55-56 (with concise English translation).
Toru Kusakawa,Lens Optics,Tokai University Press, Dec. 25, 1998, pp. 273-288 (with concise English transaltion).
Kazuo Sakai et al.,1.5 μm Range InGaAsP/InP Distributed Feedback Lasers,IEEE Journal of Quantum Electronics, vol. QE-18, No. 8, Aug. 1982, pp. 1272-1278.
Hajime Asahi et al.,New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth,Jpn. J. Appl. Phys., vol. 35, 1996, pp. L876-L879.
K. Tada et al.,Temperature Compensated Coupled Cavity Diode Lasers,Optical and Quantum Electronics, vol. 16, 1984, pp. 463-469.
Mukaihara et al. “1.3 Micron GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector(SABAR),”Electronics Letters, IEE Stevanage,GB, vol. 34, No. 9, Apr. 30, 1998, pp. 882-884.
Inoue et al. “Optical Amplification by Monolithically Integrated Distributed-Feedback Lasers,” Applied Physics, AIP, American Institute of Physics, Melville, NY, US, vol. 51, No. 28, Nov. 16, 1987, pp. 1577-1579.
H. Soda et al., “Stability in Single Longitudinal Mode Operation in GaInAsP/InP Phase-Adjusted DFB Lasers,” IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, pp. 804-814, Jun. 1987.
Shin Kamei et al., Loss reduction in super-high-delta compact athermal AWG, The Institute of Electronics, Information and Communication Engineers, p. 145, 2003.

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