Optical semiconductor device and optical semiconductor...

Details Optical semiconductor device and optical semiconductor... Optical semiconductor device and optical semiconductor...

2007-05-30

2008-12-30

Peng, Charlie (Department: 2883)

Optical waveguides

Planar optical waveguide

C385S014000

Reexamination Certificate

active

07471864

ABSTRACT:
An integrated optical waveguide has first, second, and third optical waveguiding regions. The second optical waveguiding region has a refractive index different from that of the first optical waveguiding region. The second optical waveguiding region has an interface surface with the first optical waveguiding region that is inclined with respect to the waveguide direction of the first optical waveguiding region. The third optical waveguiding region has an interface surface with the second optical waveguiding region that is disposed such that a refraction direction through the interface surface is in line with the waveguide direction.

REFERENCES:
patent: 3605037 (1971-09-01), D'Asaro et al.
patent: 4405236 (1983-09-01), Mitsuhashi et al.
patent: 4505539 (1985-03-01), Auracher et al.
patent: 4583227 (1986-04-01), Kirkby
patent: 5022042 (1991-06-01), Bradley
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5157468 (1992-10-01), Matsumoto
patent: 5719974 (1998-02-01), Kashyap
patent: 5838854 (1998-11-01), Taneya et al.
patent: 6163631 (2000-12-01), Kawanishi et al.
patent: 6208795 (2001-03-01), Nakano et al.
patent: 6320888 (2001-11-01), Tanaka et al.
patent: 6483966 (2002-11-01), Bona et al.
patent: 6501776 (2002-12-01), Numai
patent: 6522794 (2003-02-01), Bischel et al.
patent: 6530698 (2003-03-01), Kuhara et al.
patent: 6556735 (2003-04-01), Kato
patent: 6580740 (2003-06-01), Funabashi et al.
patent: 6711323 (2004-03-01), Nayyer
patent: 2003/0044119 (2003-03-01), Sasaki et al.
patent: 31 31 232 (1982-04-01), None
patent: 0 790 682 (1997-08-01), None
patent: 1 089 108 (2001-04-01), None
patent: 55-123188 (1980-09-01), None
patent: 62-202583 (1987-09-01), None
patent: 01-025586 (1989-01-01), None
patent: 01-118806 (1989-05-01), None
patent: 02-074909 (1990-03-01), None
patent: 05-048198 (1993-02-01), None
patent: 06-338650 (1994-12-01), None
patent: 08-211342 (1996-08-01), None
patent: 09-036495 (1997-02-01), None
patent: 09-092924 (1997-04-01), None
patent: 09-331102 (1997-12-01), None
patent: 2000-019345 (2000-01-01), None
patent: 2000-223784 (2000-08-01), None
patent: 2000-223787 (2000-08-01), None
patent: 2002-014247 (2002-01-01), None
patent: 2002-076513 (2002-03-01), None
patent: 2002-328244 (2002-11-01), None
Abstract of Japanese Patent Publication No. 63-116485, published May 20, 1988.
Kazuo Sakai et al.,1.5 εm Range InGaAsP/InP Distributed Feedback Lasers, IEEE Journal of Quantum Electronics, vol. QE-18, No. 8, Aug. 1982, pp. 1272-1278.
Hajime Asahi et al.,New III-V Compound Semiconductors TIInGaP for 0.9 εm to over 10 εm Wavelength Range Laser Diodes and Their First Successful Growth, Jpn. J. Appl. Phys., vol. 35, 1996, pp. L876-L879.
K. Tada et al.,Temperature Compensated Coupled Cavity Diode Lasers, Optical and Quantum Electronics, vol. 16, 1984, pp. 463-469.
T. Tanaka et al.,Hybrid Integrated External Cavity Laser without Temperature Dependent Mode Hopping, Electronics Letters, vol. 35, No. 2, Jan. 21, 1999, pp. 149-150.
Takeshi Kurosaki et al.,A Method for Reduction in Internal Reflection of Monolithically Integrated Optical Devices with Butt-Jointed Optical Waveguides, C-I, vol. J79-C-I, No. 12, Dec. 25, 1996, pp. 482-483 (with concise English translation).
Yoshiaki Nakano et al.,Analysis of DFB, and DBR Lasers Coupled to Fabry-Perot Resonator with Consideration on Their Temperature Compensation Properties, Department of Electronic Engineering, University of Tokyo, Jul. 24, 1984, pp. 55-62 (with concise English translation).
Toru Kusakawa,Lens Optics, Tokai University Press, Dec. 25, 1998, pp. 273-288 (with concise English translation).
Mukaihara et al. “1.3 Micron GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR),”Electronics Letters, IEE Stevenage, GB, vol. 34, No. 9, Apr. 30, 1998, pp. 882-884.
Inoue et al. “Optical Amplification by Monolithically Integrated Distributed-Feedback Lasers,” Applied Physics, AIP, American Institute of Physics, Melville, NY, US, vol. 51, No. 28, Nov. 16, 1987, pp. 1577-1579.

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