Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-04-05
2011-04-05
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046010, C372S046015
Reexamination Certificate
active
07920613
ABSTRACT:
The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.
REFERENCES:
patent: 2007/0153857 (2007-07-01), Chua et al.
patent: 2008/0013579 (2008-01-01), Matsuda et al.
patent: 2002-026458 (2002-01-01), None
patent: 2002026458 (2002-01-01), None
patent: 2007-103581 (2007-04-01), None
Ikeqami, Tsuchiya, Mikami, “Semiconductor Photonic Device Engineering”, Corona Publishing Co., LTd., Jan. 10, 1005.
Harvey Minsun
Renesas Electronic Corporation
Stafford Patrick
Young & Thompson
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