Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-08-16
2011-08-16
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S622000, C257S623000, C257S667000, C257S676000, C257S730000, C257SE33056, C257SE33057, C257SE33058, C438S123000
Reexamination Certificate
active
07999281
ABSTRACT:
An optical semiconductor device includes: an optical semiconductor element including a light-emitting layer formed on a first principal surface, a first electrode formed on the light-emitting layer and having a smaller size than the first principal surface, and a second electrode formed on a second principal surface different from the first principal surface; a first lead portion including a bonding region to which the first electrode is bonded and which has a smaller size than the first principal surface, and a first groove portion formed on an outer peripheral region adjacent to the bonding region, the first lead portion being electrically connected to the first electrode bonded to the bonding region by use of a bonding member; and a second lead portion electrically connected to the second electrode by use of a connecting member.
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Office Action issued Dec. 14, 2010, in Taiwan Patent Applicaion No. 096137885 (with English Translation).
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Shimokawa Kazuo
Ukita Yasunari
Joy Jeremy J
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Zandra
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