Optical semiconductor device and method of fabricating the same

Details Optical semiconductor device and method of fabricating the same Optical semiconductor device and method of fabricating the same

2005-02-22

2005-02-22

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S187000, C257S189000

Reexamination Certificate

active

06858886

ABSTRACT:
A photodiode (111) and resistors (121) are formed on a semi-insulating InP substrate (101). The photodiode (111) is formed by subjecting a layered structure formed by successively depositing an n+-type InP cladding layer (102), an n-type InGaAsP core layer (103), a nondoped InGaAs active layer (104), a p-type InGaAsP core layer (105), and a p+-type InP cladding layer106on the InP substrate (101) to a selective etching process. The resistors (121) have the same layered structure as the photodiode (111). Photodiode (111) is connected to n-type wiring lines (131) and a p-type wiring line (141). Resistors (121) are connected to the n-type wiring lines (131) and the p-type wiring line (141) in parallel to the photodiode (111). A side surface on the side of the photodiode (111) of the InP substrate (101) is a cleavage plane, and the cleavage plane is coated with an antireflection film (161). Since the resistors (121) have a p-type semiconductor layer having a high resistivity, the resistors (121) can be formed in a big width. Consequently, change of resistance corresponding to change of the width of the resistor is small and hence matching can be easily achieved.

REFERENCES:
patent: 5014096 (1991-05-01), Matsuda et al.
patent: 5212395 (1993-05-01), Berger et al.
patent: 5399885 (1995-03-01), Thijs et al.
patent: 6501104 (2002-12-01), Inomoto

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