Optical semiconductor device and method of fabricating...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material

Reexamination Certificate

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C257S079000, C257SE33001, C438S022000, C438S045000

Reexamination Certificate

active

07075119

ABSTRACT:
In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when forming the p-type semiconductor layer. In this event, the flow rates of source materials supplying the respective elements are adjusted so that the p-type semiconductor layer has a hole concentration of about 1.0×1018/cm3and an Fe concentration of about 2×1016to 8×1016/cm3.

REFERENCES:
patent: 5814534 (1998-09-01), Kimura et al.
patent: 6911713 (2005-06-01), Ikeda et al.
patent: 6-37392 (1994-02-01), None
patent: 8-102567 (1996-04-01), None
Matsuyuki Ogasawara et al., “Correlation between Fe-Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators”, Jpn. J. Appl. Phys. vol. 42 (2003) pp. 2320-2324, Part 1, No. 4B, Apr. 2003.

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