Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2006-07-11
2006-07-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S079000, C257SE33001, C438S022000, C438S045000
Reexamination Certificate
active
07075119
ABSTRACT:
In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when forming the p-type semiconductor layer. In this event, the flow rates of source materials supplying the respective elements are adjusted so that the p-type semiconductor layer has a hole concentration of about 1.0×1018/cm3and an Fe concentration of about 2×1016to 8×1016/cm3.
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Matsuyuki Ogasawara et al., “Correlation between Fe-Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators”, Jpn. J. Appl. Phys. vol. 42 (2003) pp. 2320-2324, Part 1, No. 4B, Apr. 2003.
Flynn Nathan J.
Leydig , Voit & Mayer, Ltd.
Quinto Kevin
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