Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-03-26
2010-10-12
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE21113
Reexamination Certificate
active
07811847
ABSTRACT:
Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate1, an AlN nucleation layer3formed on the sapphire substrate1, a pulsed supplied AlN layer5formed on the AlN nucleation layer3, and a continuous growth AlN layer7formed on the pulsed supplied AlN layer5. Formed on the continuous growth AlN layer7is at least one set of a pulsed supplied AlN layer11and a continuous growth AlN layer15. The AlN layer3is grown in an initial nucleation mode which is a first growth mode by using an NH3pulsed supply method. The pulsed supplied AlN layer5is formed by using NH3pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer3. The continuous growth AlN layer7is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer5, 11is 0.3 μm and the thickness of the continuous growth AlN layer7, 15is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer3is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer5is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer7is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3pulsed supply AlN growth method.
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Hirayama Hideki
Kamata Norihiko
Ohashi Tomoaki
Chaudhari Chandra
Lando & Anastasi LLP
Riken
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