Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-04-07
2010-06-15
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S024000, C438S039000, C438S040000, C438S041000, C438S042000, C438S043000, C438S044000, C438S045000, C438S069000, C257SE31101, C257SE31102, C257S443000, C257SE31109, C372S050121, C372S050100
Reexamination Certificate
active
07736923
ABSTRACT:
An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.
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Japanese office action issued in corresponding Japanese Patent Application No. 2004-325155, dated Mar. 20, 2007.
Abdelaziez Yasser A
Garber Charles D
McDermott Will & Emery LLP
Panasonic Corporation
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