Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-10-30
2007-10-30
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S097000, C257S622000, C372S045013
Reexamination Certificate
active
10298011
ABSTRACT:
Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization dependency can be eliminated as described above. Thus, the optical semiconductor device can have very low polarization dependency.
REFERENCES:
patent: 4276098 (1981-06-01), Nelson et al.
patent: 4731790 (1988-03-01), Sawai
patent: 5608229 (1997-03-01), Mukai et al.
patent: 6653653 (2003-11-01), Brousseau, III
patent: 6683013 (2004-01-01), Kim et al.
patent: 6744960 (2004-06-01), Pelka
patent: HEI 05-21903 (A) (1993-01-01), None
patent: 05-343800 (1993-12-01), None
patent: 06-132614 (1994-05-01), None
patent: 08-125256 (1996-05-01), None
patent: 08-201739 (1996-08-01), None
patent: 2001-308467 (2001-11-01), None
Fujitsu Limited
Jackson Jerome
LandOfFree
Optical semiconductor device and method for fabricating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical semiconductor device and method for fabricating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device and method for fabricating the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3853877